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107M010 HC144T 1608S 2SB14 RN2414 BIH01 341CESPF SMA5927B
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 MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
UB-Suffix Series CMOS Gates
The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non-buffered functions. * Supply Voltage Range = 3.0 Vdc to 18 Vdc * Linear and Oscillator Applications * Capable of Driving Two Low-power TTL Loads or One Low-power Schottky TTL Load Over the Rated Temperature Range * Double Diode Protection on All Inputs * Pin-for-Pin Replacements for Corresponding CD4000 Series UB Suffix Devices
Quad 2-Input NOR Gate Dual 4-Input NOR Gate Quad 2-Input NAND Gate Dual 4-Input NAND Gate Triple 3-Input NAND Gate Triple 3-Input NOR Gate
MC14001UB MC14002UB MC14011UB MC14012UB MC14023UB MC14025UB
LOGIC DIAGRAMS
MC14001UB Quad 2-Input NOR Gate 1 2 5 6 8 9 12 13 MC14012UB Dual 4-Input NAND Gate 1 2 3 4 5 9 10 11 12 NC = 6, 8 1 2 8 3 4 13 5 11 12 13 9 3 4 10 11 2 3 4 5 9 10 11 12 MC14002UB Dual 4-Input NOR Gate 1 1 2 5 6 8 13 NC = 6, 8 MC14023UB Triple 3-Input NAND Gate 1 2 8 3 4 5 11 12 13 9 12 13 MC14025UB Triple 3-Input NOR Gate 9 MC14011UB Quad 2-Input NAND Gate 3 4 10 11
L SUFFIX CERAMIC CASE 632
P SUFFIX PLASTIC CASE 646
D SUFFIX SOIC CASE 751A
ORDERING INFORMATION
MC14XXXUBCP MC14XXXUBCL MC14XXXUBD Plastic Ceramic SOIC
6
6
TA = - 55 to 125C for all packages.
10
10
VDD = PIN 14 VSS = PIN 7 FOR ALL DEVICES
This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high-impedance circuit. For proper operation, Vin and Vout should be constrained to the range VSS (Vin or Vout) VDD. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either VSS or VDD). Unused outputs must be left open.
v
v
REV 3 1/94
(c)MC14001UB Motorola, Inc. 1995 18
MOTOROLA CMOS LOGIC DATA
PIN ASSIGNMENTS
MC14001UB Quad 2-Input NOR Gate
IN 1A IN 2A OUTA OUTB IN 1B IN 2B VSS 1 2 3 4 5 6 7 14 13 12 11 10 9 8 VDD IN 2D IN 1D OUTD OUTC IN 2C IN 1C
MC14002UB Dual 4-Input NOR Gate
OUTA IN 1A IN 2A IN 3A IN 4A NC VSS 1 2 3 4 5 6 7 14 13 12 11 10 9 8 VDD OUTB IN 4B IN 3B IN 2B IN 1B NC
MC14011UB Quad 2-Input NAND Gate
IN 1A IN 2A OUTA OUTB IN 1B IN 2B VSS 1 2 3 4 5 6 7 14 13 12 11 10 9 8 VDD IN 2D IN 1D OUTD OUTC IN 2C IN 1C
MC14012UB Dual 4-Input NAND Gate
OUTA IN 1A IN 2A IN 3A IN 4A NC VSS 1 2 3 4 5 6 7 14 13 12 11 10 9 8 VDD OUTB IN 4B IN 3B IN 2B IN 1B NC
MC14023UB Triple 3-Input NAND Gate
IN 1A IN 2A IN 1B IN 2B IN 3B OUTB VSS 1 2 3 4 5 6 7 14 13 12 11 10 9 8 VDD IN 3C IN 2C IN 1C OUTC OUTA IN 3A
MC14025UB Triple 3-Input NOR Gate
IN 1A IN 2A IN 1B IN 2B IN 3B OUTB VSS 1 2 3 4 5 6 7 14 13 12 11 10 9 8 VDD IN 3C IN 2C IN 1C OUTC OUTA IN 3A
IIIIIIIIIIIIIIIIIIIII I I I III I I I IIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIII I I I III I I I IIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIII I IIIIIIII I I I IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIII
MAXIMUM RATINGS* (Voltages Referenced to VSS)
Symbol VDD Parameter DC Supply Voltage Value Unit V V - 0.5 to + 18.0 Vin, Vout lin, lout PD Input or Output Voltage (DC or Transient) - 0.5 to VDD + 0.5 10 500 Input or Output Current (DC or Transient), per Pin Power Dissipation, per Package Storage Temperature mA mW Tstg TL - 65 to + 150 260
NC = NO CONNECTION
_C _C
Lead Temperature (8-Second Soldering)
* Maximum Ratings are those values beyond which damage to the device may occur. Temperature Derating: Plastic "P and D/DW" Packages: - 7.0 mW/_C From 65_C To 125_C Ceramic "L" Packages: - 12 mW/_C From 100_C To 125_C
MOTOROLA CMOS LOGIC DATA
MC14001UB 19
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I III I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II II III I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II II III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II II III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II II III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II II III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II II III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II II III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II II III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II II III I III I I I I I I I I I II II II III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II II III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II II III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II II III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II II III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II II III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II II III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II II III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II II III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II II III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II II III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II II III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II II III I III I I I I I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II II III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II II III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II II III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II II III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II II III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II II III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II II III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II II III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II II III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II II III I III I I I I I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II II III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II II III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II II III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II II III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II II III I III I I I I I I I I I I II III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II II III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II II III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II II III I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II II III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II II III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II II III I III IIII I III IIIIIIIIIIIIIIIII II II II III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II II III I IIIII IIIIII IIII I I I II II II III I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
** The formulas given are for the typical characteristics only at 25_C. #Data labelled "Typ" is not to be used for design purposes but is intended as an indication of the IC's potential performance.
IT(CL) = IT(50 pF) + (CL - 50) Vfk where: IT is in H (per package), CL in pF, V = (VDD - VSS) in volts, f in kHz is input frequency, and k = 0.001 x the number of exercised gates per package.
To calculate total supply current at loads other than 50 pF:
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
Total Supply Current** (Dynamic plus Quiescent, Per Gate CL = 50 pF)
Quiescent Current (Per Package)
Input Capacitance (Vin = 0)
Input Current
Output Drive Current (VOH = 2.5 Vdc) (VOH = 4.6 Vdc) (VOH = 9.5 Vdc) (VOH = 13.5 Vdc)
Input Voltage (VO = 4.5 Vdc) (VO = 9.0 Vdc) (VO = 13.5 Vdc)
Output Voltage Vin = VDD or 0
MC14001UB 20
(VOL = 0.4 Vdc) (VOL = 0.5 Vdc) (VOL = 1.5 Vdc) (VO = 0.5 Vdc) (VO = 1.0 Vdc) (VO = 1.5 Vdc) Vin = 0 or VDD Characteristic "1" Level "1" Level "0" Level "0" Level Source Sink Symbol VOH VOL IOH IDD IOL Cin VIL IIH Iin IT VDD Vdc 5.0 10 15 5.0 10 15 5.0 10 15 5.0 5.0 10 15 5.0 10 15 5.0 10 15 5.0 10 15 5.0 10 15 15 -- - 1.2 - 0.25 - 0.62 - 1.8 4.95 9.95 14.95 4.0 8.0 12.5 0.64 1.6 4.2 Min -- -- -- -- -- -- -- -- -- -- -- - 55_C 0.1 0.25 0.5 1.0 0.05 0.05 0.05 Max 1.0 2.0 2.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 4.95 9.95 14.95 - 1.0 - 0.2 - 0.5 - 1.5 4.0 8.0 12.5 0.51 1.3 3.4 Min -- -- -- -- -- -- -- -- -- -- -- 0.00001 0.0005 0.0010 0.0015 - 1.7 - 0.36 - 0.9 - 3.5 Typ # 25_C 0.88 2.25 8.8 2.75 5.50 8.25 2.25 4.50 6.75 5.0 5.0 10 15 0 0 0
IT = (0.3 A/kHz) f + IDD/N IT = (0.6 A/kHz) f + IDD/N IT = (0.8 A/kHz) f + IDD/N
MOTOROLA CMOS LOGIC DATA
0.1 0.25 0.5 1.0 0.05 0.05 0.05 Max 7.5 1.0 2.0 2.5 -- -- -- -- -- -- -- -- -- -- -- -- -- - 0.7 - 0.14 - 0.35 - 1.1 4.95 9.95 14.95 4.0 8.0 12.5 0.36 0.9 2.4 Min -- -- -- -- -- -- -- -- -- -- -- 125_C 1.0 0.05 0.05 0.05 Max 7.5 15 30 1.0 2.0 2.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- mAdc mAdc Adc Adc Adc Unit Vdc Vdc Vdc Vdc pF
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII II III I I I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII II III I I I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII II III I I I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
SWITCHING CHARACTERISTICS* (CL = 50 pF, TA = 25_C)
Characteristic Symbol tTLH VDD Vdc 5.0 10 15 5.0 10 15 5.0 10 15 Min -- -- -- -- -- -- -- -- -- Typ # 180 90 65 100 50 40 90 50 40 Max 360 180 130 200 100 80 180 100 80 Unit ns Output Rise Time tTLH = (3.0 ns/pF) CL + 30 ns tTLH = (1.5 ns/pF) CL + 15 ns tTLH = (1.1 ns/pF) CL + 10 ns Output Fall Time tTHL = (1.5 ns/pF) CL + 25 ns tTHL = (0.75 ns/pF) CL + 12.5 ns tTHL = (0.55 ns/pF) CL + 9.5 ns tTHL ns Propagation Delay Time tPLH, tPHL = (1.7 ns/pF) CL + 30 ns tPLH, tPHL = (0.66 ns/pF) CL + 22 ns tPLH, tPHL = (0.50 ns/pF) CL + 15 ns tPLH, tPHL ns * The formulas given are for the typical characteristics only at 25_C. #Data labelled "Typ" is not to be used for design purposes but is intended as an indication of the IC's potential performance. 20 ns VDD 14 PULSE GENERATOR INPUT * 7 VSS tTHL OUTPUT tPHL CL OUTPUT INVERTING 90% 50% 10% tTLH INPUT 90% 50% 10% tPLH VOH VOL 20 ns VDD 0V * All unused inputs of AND, NAND gates must be connected to VDD. All unused inputs of OR, NOR gates must be connected to VSS.
Figure 1. Switching Time Test Circuit and Waveforms
MC14001UB CIRCUIT SCHEMATIC
VDD 14
MC14002UB CIRCUIT SCHEMATIC (1/2 of Device Shown)
VDD 2, 9 8 3, 10 4, 11 5, 12 1, 13 14
3
10
1
2
9
6
13
5
12
VSS
7
4
7 VSS
11
MOTOROLA CMOS LOGIC DATA
MC14001UB 21
MC14011UB CIRCUIT SCHEMATIC (1/4 of Device Shown)
14 VDD
MC14012UB CIRCUIT SCHEMATIC (1/2 of Device Shown)
14 VDD
MC14023UB CIRCUIT SCHEMATIC (1/3 of Device Shown)
14 VDD
3, 4, 10, 11 1, 6, 8, 13 2, 5, 9, 12 7 VSS 2, 9 3, 10 4, 11 5, 12 7 VSS
1, 13 6, 9, 10 5, 1, 11 4, 2, 12 3, 8, 13 7 VSS
MC14025UB CIRCUIT SCHEMATIC (1/3 of Device Shown)
Vout , OUTPUT VOLTAGE (Vdc) 14 VDD 1, 3, 11 2, 4, 12 8, 5, 13 9, 6, 10
16 14 12 10 8.0 6.0 4.0
Vout , OUTPUT VOLTAGE (Vdc)
I D, DRAIN CURRENT (mAdc)
VDD = 15 Vdc TA = + 25C Unused input connected to VSS. a One input only 10 Vdc b Both inputs 8.0 b 5.0 Vdc b ba a a 6.0 15 Vdc 4.0 10 Vdc 2.0 0 0 2.0 4.0 6.0 8.0 10 12 14 16 Vin, INPUT VOLTAGE (Vdc)
16 14 12 10 8.0
VDD = 15 Vdc Unused input connected to b VSS. a 10 Vdc a TA = + 125C b TA = - 55C a b
6.0 4.0 2.0 0 0
5.0 Vdc ab
2.0 7 VSS 0
2.0 4.0 6.0 8.0 10 12 14 16 Vin, INPUT VOLTAGE (Vdc)
Figure 2. Typical Voltage and Current Transfer Characteristics
Figure 3. Typical Voltage Transfer Characteristics versus Temperature
0 VGS = - 5.0 Vdc a TA = - 55C b TA = + 25C c TA = + 125C c - 10 Vdc - 8.0 b
c b I D, DRAIN CURRENT (mAdc) a
10 a 8.0 b c a b c a TA = - 55C b TA = + 25C c TA = + 125C a b c 5.0 Vdc VGS = 10 Vdc 15 Vdc
I D, DRAIN CURRENT (mAdc)
- 2.0
- 4.0
6.0
- 6.0
4.0
c
b a a - 2.0
- 15 Vdc
2.0
- 10 - 10
0 0 0 2.0 4.0 6.0 VDS, DRAIN VOLTAGE (Vdc) 8.0 10
- 8.0
- 6.0 - 4.0 VDS, DRAIN VOLTAGE (Vdc)
Figure 4. Typical Output Source Characteristics
Figure 5. Typical Output Sink Characteristics
MC14001UB 22
MOTOROLA CMOS LOGIC DATA
OUTLINE DIMENSIONS
L SUFFIX CERAMIC DIP PACKAGE CASE 632-08 ISSUE Y
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. 4. DIMENSION F MAY NARROW TO 0.76 (0.030) WHERE THE LEAD ENTERS THE CERAMIC BODY. INCHES MIN MAX 0.750 0.785 0.245 0.280 0.155 0.200 0.015 0.020 0.055 0.065 0.100 BSC 0.008 0.015 0.125 0.170 0.300 BSC 0_ 15_ 0.020 0.040 MILLIMETERS MIN MAX 19.05 19.94 6.23 7.11 3.94 5.08 0.39 0.50 1.40 1.65 2.54 BSC 0.21 0.38 3.18 4.31 7.62 BSC 0_ 15_ 0.51 1.01
-A-
14 9
-B-
1 7
C
L
-T-
SEATING PLANE
K F D
14 PL
G 0.25 (0.010)
M
N J TA
S 14 PL
M 0.25 (0.010)
M
TB
S
DIM A B C D F G J K L M N
P SUFFIX PLASTIC DIP PACKAGE CASE 646-06 ISSUE L
14 8
B
1 7
NOTES: 1. LEADS WITHIN 0.13 (0.005) RADIUS OF TRUE POSITION AT SEATING PLANE AT MAXIMUM MATERIAL CONDITION. 2. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL. 3. DIMENSION B DOES NOT INCLUDE MOLD FLASH. 4. ROUNDED CORNERS OPTIONAL. DIM A B C D F G H J K L M N INCHES MIN MAX 0.715 0.770 0.240 0.260 0.145 0.185 0.015 0.021 0.040 0.070 0.100 BSC 0.052 0.095 0.008 0.015 0.115 0.135 0.300 BSC 0_ 10_ 0.015 0.039 MILLIMETERS MIN MAX 18.16 19.56 6.10 6.60 3.69 4.69 0.38 0.53 1.02 1.78 2.54 BSC 1.32 2.41 0.20 0.38 2.92 3.43 7.62 BSC 0_ 10_ 0.39 1.01
A F C N H G D
SEATING PLANE
L
J K M
MOTOROLA CMOS LOGIC DATA
MC14001UB 23
OUTLINE DIMENSIONS
D SUFFIX PLASTIC SOIC PACKAGE CASE 751A-03 ISSUE F
-A-
14 8
-B-
1 7
P 7 PL 0.25 (0.010)
M
B
M
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION.
G C
R X 45 _
F
-T-
SEATING PLANE
D 14 PL 0.25 (0.010)
M
K TB
S
M A
S
J
DIM A B C D F G J K M P R
MILLIMETERS MIN MAX 8.55 8.75 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50
INCHES MIN MAX 0.337 0.344 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0_ 7_ 0.228 0.244 0.010 0.019
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MC14001UB 24
*MC14001UB/D*
MOTOROLA CMOS LOGIC DATA MC14001UB/D


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